APT20M22B2VR Datasheet. Specs and Replacement

Type Designator: APT20M22B2VR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1950 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO247

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APT20M22B2VR datasheet

 ..1. Size:63K  apt
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APT20M22B2VR

APT20M22B2VR 200V 100A 0.022 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L... See More ⇒

 3.1. Size:64K  apt
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APT20M22B2VR

APT20M22B2VFR 200V 100A 0.022 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch... See More ⇒

 6.1. Size:66K  apt
apt20m22lvfr.pdf pdf_icon

APT20M22B2VR

APT20M22LVFR 200V 100A 0.022 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T... See More ⇒

 6.2. Size:71K  apt
apt20m22jvr.pdf pdf_icon

APT20M22B2VR

APT20M22JVR 200V 97A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒

Detailed specifications: APT12040JVR, APT12080JVR, APT12080LVR, APT20M11JVFR, APT20M11JVR, APT20M13PVR, APT20M19JVR, APT20M22B2VFR, K2611, APT20M22JVFR, APT20M22JVR, APT20M22LVFR, APT20M22LVR, APT20M26WVR, APT20M38BVFR, APT20M38BVR, APT20M38SVR

Keywords - APT20M22B2VR MOSFET specs

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