All MOSFET. APT20M22B2VR Datasheet

 

APT20M22B2VR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M22B2VR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 520 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 1950 pF

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO247

APT20M22B2VR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M22B2VR Datasheet (PDF)

1.1. apt20m22b2vr.pdf Size:63K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22B2VR 200V 100A 0.022Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • L

1.2. apt20m22b2vfr.pdf Size:64K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22B2VFR 200V 100A 0.022Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanch

 2.1. apt20m22jvr.pdf Size:71K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

2.2. apt20m22jvfr.pdf Size:73K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22JVFR 200V 97A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode

 2.3. apt20m22lvr.pdf Size:64K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22LVR 200V 100A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Low

2.4. apt20m22.pdf Size:71K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

 2.5. apt20m22lvfr.pdf Size:66K _apt

APT20M22B2VR
APT20M22B2VR

APT20M22LVFR 200V 100A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T

Datasheet: APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , FDS4435 , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR .

 

 
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