APT20M22B2VR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M22B2VR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 520 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1950 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
Package: TO247
APT20M22B2VR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M22B2VR Datasheet (PDF)
1.1. apt20m22b2vr.pdf 
Size:63K _apt
APT20M22B2VR 200V 100A 0.022Ω POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • L
1.2. apt20m22b2vfr.pdf Size:64K _apt
APT20M22B2VFR 200V 100A 0.022Ω POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanch
2.1. apt20m22jvr.pdf Size:71K _apt
APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche
2.2. apt20m22jvfr.pdf Size:73K _apt
APT20M22JVFR 200V 97A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Fast Recovery Body Diode
2.3. apt20m22lvr.pdf Size:64K _apt
APT20M22LVR 200V 100A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Faster Switching • 100% Avalanche Tested D • Low
2.4. apt20m22.pdf Size:71K _apt
APT20M22JVR 200V 97A 0.022Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche
2.5. apt20m22lvfr.pdf Size:66K _apt
APT20M22LVFR 200V 100A 0.022Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche T
Datasheet: APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , FDS4435 , APT20M22JVFR , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR .
