All MOSFET. STP10NM60N Datasheet

 

STP10NM60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP10NM60N
   Marking Code: 10NM60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO220

 STP10NM60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP10NM60N Datasheet (PDF)

 ..1. Size:901K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf

STP10NM60N STP10NM60N

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 ..2. Size:997K  st
 std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf

STP10NM60N STP10NM60N

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 ..3. Size:1072K  st
 std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf

STP10NM60N STP10NM60N

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

 0.1. Size:1129K  st
 std10nm60nd stf10nm60nd stp10nm60nd.pdf

STP10NM60N STP10NM60N

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 6.1. Size:525K  st
 std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf

STP10NM60N STP10NM60N

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 6.2. Size:205K  inchange semiconductor
 stp10nm65n.pdf

STP10NM60N STP10NM60N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NM65NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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