All MOSFET. APT20M22LVFR Datasheet

 

APT20M22LVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT20M22LVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 290 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO264

 APT20M22LVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M22LVFR Datasheet (PDF)

 ..1. Size:66K  apt
 apt20m22lvfr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22LVFR200V 100A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 ..2. Size:254K  inchange semiconductor
 apt20m22lvfr.pdf

APT20M22LVFR APT20M22LVFR

isc N-Channel MOSFET Transistor APT20M22LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:64K  apt
 apt20m22lvr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22LVR200V 100A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 4.2. Size:254K  inchange semiconductor
 apt20m22lvr.pdf

APT20M22LVFR APT20M22LVFR

isc N-Channel MOSFET Transistor APT20M22LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 6.1. Size:71K  apt
 apt20m22jvr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.2. Size:71K  apt
 apt20m22.pdf

APT20M22LVFR APT20M22LVFR

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.3. Size:64K  apt
 apt20m22b2vfr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22B2VFR200V 100A 0.022POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

 6.4. Size:73K  apt
 apt20m22jvfr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22JVFR200V 97A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 6.5. Size:63K  apt
 apt20m22b2vr.pdf

APT20M22LVFR APT20M22LVFR

APT20M22B2VR200V 100A 0.022POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

Datasheet: APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR , MDF11N65B , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR , APT20M42HVR , APT20M45BVFR .

 

 
Back to Top