STP12NK30Z MOSFET. Datasheet pdf. Equivalent
Type Designator: STP12NK30Z
Marking Code: P12NK30Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
STP12NK30Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP12NK30Z Datasheet (PDF)
stp12nk30z.pdf
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stp12n60m2.pdf
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stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
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stp12n50m2.pdf
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stb12nm50t4 stp12nm50fp.pdf
STP12NM50 - STP12NM50FPSTB12NM50 - STB12NM50-1N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)33STB12NM50 550V
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stb12nm60n-1 stf12nm60n stp12nm60n stw12nm60n.pdf
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stp12nm50fp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP12NM50FPFEATURES Drain-source on-resistance:RDS(on) 0.35@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe suitable for increasing power density of high voltage convertersallowing system miniaturization and
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI5513CD
History: SI5513CD
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