STP12NK80Z Specs and Replacement

Type Designator: STP12NK80Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

STP12NK80Z substitution

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STP12NK80Z datasheet

 ..1. Size:526K  st
stb12nk80z stp12nk80z stw12nk80z.pdf pdf_icon

STP12NK80Z

STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID PW (@Tjmax) STB12NK80Z 800V ... See More ⇒

 7.1. Size:286K  st
stp12nk30z.pdf pdf_icon

STP12NK80Z

STP12NK30Z N-CHANNEL 300V - 0.36 - 9A- TO-220 Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID (1) Pw (1) STP12NK30Z 300 V ... See More ⇒

 8.1. Size:391K  st
stp12n60m2.pdf pdf_icon

STP12NK80Z

STP12N60M2 N-channel 600 V, 0.395 typ., 9 A MDmesh M2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STP12N60M2 600 V 0.450 9 A 85 W Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications F... See More ⇒

Detailed specifications: STP11NM80, STP120N4F6, STP120NF04, STP120NF10, STP12N120K5, STP12N65M5, STP12NK30Z, STP12NK60Z, IRFP260, STP12NM50, STP12PF06, STP130NH02L, STP13N95K3, STP13NK60Z, STP13NK60ZFP, STP13NM60N, STP140NF55

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