All MOSFET. STP20NM65N Datasheet

 

STP20NM65N MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP20NM65N
   Marking Code: 20NM65N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 13.5 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO220

 STP20NM65N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP20NM65N Datasheet (PDF)

 ..1. Size:858K  st
 stp20nm65n stf20nm65n.pdf

STP20NM65N STP20NM65N

STP20NM65NSTF20NM65NN-channel 650 V, 0.250 , 15 A TO-220, TO-220FPsecond generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Order codes ID@Tjmax max.STP20NM65N710 V 0.270 15 ASTF20NM65N33 100 % avalanche tested2211 Low input capacitance and gate chargeTO-220TO-220FP Low gate input resistanceApplication Switching applicationsF

 6.1. Size:309K  st
 stb20nm60a-1 stp20nm60a stf20nm60a.pdf

STP20NM65N STP20NM65N

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V

 6.2. Size:300K  st
 stp20nm60a.pdf

STP20NM65N STP20NM65N

STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V

 6.3. Size:444K  st
 stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STP20NM65N STP20NM65N

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

 6.4. Size:535K  st
 stp20nm60.pdf

STP20NM65N STP20NM65N

STP20NM60 - STP20NM60FPSTB20NM60 STB20NM60-1N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP20NM60 600 V

 6.5. Size:344K  st
 stf20nm60d stp20nm60fd stw20nm60fd.pdf

STP20NM65N STP20NM65N

STF20NM60D - STP20NM60FDSTW20NM60FDN-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247FDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID PwSTF20NM60D 600V

 6.6. Size:437K  st
 stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STP20NM65N STP20NM65N

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

 6.7. Size:189K  inchange semiconductor
 stp20nm60.pdf

STP20NM65N STP20NM65N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP20NM60FEATURESTypical R (on)=0.25DSLow input capacitance and gate chargeLow gate input resistances100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for increasing power density of high voltage convertersallowing system miniat

 6.8. Size:255K  inchange semiconductor
 stp20nm60fp.pdf

STP20NM65N STP20NM65N

isc N-Channel MOSFET Transistor STP20NM60FPFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FCPF16N60

 

 
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