All MOSFET. 2N6788 Datasheet

 

2N6788 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6788

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17 nC

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO205AF

2N6788 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6788 Datasheet (PDF)

1.1. 2n6788u.pdf Size:178K _update-mosfet

2N6788
2N6788

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS

1.2. 2n6788lcc4.pdf Size:23K _update-mosfet

2N6788
2N6788

2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 FEATURES 1.39 (0.055) 1.02 (0.040) 11 17 • AVALANCHE ENERGY RATING 10 18 7.62 (0.300) 7.12 (0.280) 9 1 • SIMPLE DRIVE REQUIREMENTS 0.76 (0.030) 8 2 0.51 (0.020) • HERMETICALLY SE

 1.3. 2n6788l.pdf Size:12K _update-mosfet

2N6788

2N6788L Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 100V 2.54 ID = 4.5A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 0.3Ω Ω Ω

1.4. 2n6788 irff120.pdf Size:131K _international_rectifier

2N6788
2N6788

PD - 90426C IRFF120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6788 HEXFETTRANSISTORS JANTXV2N6788 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF120 100V 0.30Ω 6.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processin

 1.5. 2n6788lcc4.pdf Size:23K _semelab

2N6788
2N6788

2N6788LCC4 IRFE120 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) ≈ 2.16 (0.085) 12 13 14 15 16 FEATURES 1.39 (0.055) 1.02 (0.040) 11 17 • AVALANCHE ENERGY RATING 10 18 7.62 (0.300) 7.12 (0.280) 9 1 • SIMPLE DRIVE REQUIREMENTS 0.76 (0.030) 8 2 0.51 (0.020) • HERMETICALLY SE

1.6. 2n6788l.pdf Size:12K _semelab

2N6788

2N6788L Dimensions in mm (inches). N-Channel MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) in a 9.01 (0.355) Hermetically sealed TO39 4.06 (0.16) 4.57 (0.18) Metal Package. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET. 5.08 (0.200) typ. VDSS = 100V 2.54 ID = 4.5A 2 (0.100) 1 3 0.74 (0.029) RDS(ON) = 0.3Ω Ω Ω

1.7. 2n6788u.pdf Size:178K _microsemi

2N6788
2N6788

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/555 DEVICES LEVELS 2N6788 2N6788U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS

Datasheet: 2N6784SM , 2N6785 , 2N6786 , 2N6786JANTX , 2N6786JANTXV , 2N6787 , 2N6787LCC4 , 2N6787-SM , IRF630 , 2N6788JANTX , 2N6788JANTXV , 2N6788SM , 2N6789 , 2N6789LCC4 , 2N6789-SM , 2N6790 , 2N6790JANTX .

 

 
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