All MOSFET. APT20M42HVR Datasheet

 

APT20M42HVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M42HVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 1145 pF

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO258

APT20M42HVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M42HVR Datasheet (PDF)

1.1. apt20m42hvr.pdf Size:66K _apt

APT20M42HVR
APT20M42HVR

APT20M42HVR 200V 50A 0.042W POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

3.1. apt20m40hvr.pdf Size:54K _update_mosfet

APT20M42HVR
APT20M42HVR

APT20M40HVR 200V 45A 0.040Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lowe

3.2. apt20m45bvr.pdf Size:92K _apt

APT20M42HVR
APT20M42HVR

APT20M45BVR 200V 56A 0.045Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

 3.3. apt20m40bvr.pdf Size:92K _apt

APT20M42HVR
APT20M42HVR

APT20M40BVR 200V 59A 0.040Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

3.4. apt20m45bvfr.pdf Size:94K _apt

APT20M42HVR
APT20M42HVR

APT20M45BVFR 200V 56A 0.045Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

 3.5. apt20m45svfr.pdf Size:97K _apt

APT20M42HVR
APT20M42HVR

APT20M45SVFR 200V 56A 0.045Ω POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

3.6. apt20m45svr.pdf Size:95K _apt

APT20M42HVR
APT20M42HVR

APT20M45SVR 200V 56A 0.045Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

Datasheet: APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR , IRF3205 , APT20M45BVFR , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR .

 

 
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