STP3N150 Specs and Replacement

Type Designator: STP3N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO220

STP3N150 substitution

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STP3N150 datasheet

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stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf pdf_icon

STP3N150

STFW3N150, STH3N150-2 STP3N150, STW3N150 Datasheet N-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Features TAB VDS RDS(on) max. ID PTOT Order codes 2 3 1 3 STFW3N150 63 W 2 2 H PAK-2 1 STH3N150-2 TO-3PF 1500 V 9 2.5 A STP3N150 140 W TAB STW3N150 3 3 100% avalanche tested 2 2 1 1 TO-220 ... See More ⇒

 ..2. Size:759K  st
stfw3n150 stp3n150 stw3n150.pdf pdf_icon

STP3N150

STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features RDS(on) Type VDSS ID PTOT max. STFW3N150 1500 V ... See More ⇒

 ..3. Size:262K  inchange semiconductor
stp3n150.pdf pdf_icon

STP3N150

isc N-Channel MOSFET Transistor STP3N150 FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS... See More ⇒

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stp3n100xi.pdf pdf_icon

STP3N150

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Detailed specifications: STP32N65M5, STP34NM60N, STP34NM60ND, STP35N65M5, STP35NF10, STP36NF06, STP36NF06L, STP3LN62K3, IRF9540N, STP3N62K3, STP3NK100Z, STP3NK60Z, STP3NK60ZFP, STP3NK80Z, STP3NK90Z, STP40NF03L, STP40NF10

Keywords - STP3N150 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs