APT20M45SVR Specs and Replacement

Type Designator: APT20M45SVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: D3PAK

APT20M45SVR substitution

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APT20M45SVR datasheet

 ..1. Size:95K  apt
 apt20m45svr.pdf pdf_icon

APT20M45SVR

APT20M45SVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 4.1. Size:97K  apt
 apt20m45svfr.pdf pdf_icon

APT20M45SVR

APT20M45SVFR 200V 56A 0.045 POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 6.1. Size:92K  apt
 apt20m45bvr.pdf pdf_icon

APT20M45SVR

APT20M45BVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

 6.2. Size:94K  apt
 apt20m45bvfr.pdf pdf_icon

APT20M45SVR

APT20M45BVFR 200V 56A 0.045 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

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Detailed specifications: APT20M38BVFR, APT20M38BVR, APT20M38SVR, APT20M40BVR, APT20M42HVR, APT20M45BVFR, APT20M45BVR, APT20M45SVFR, 20N60, APT30M19JVFR, APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR, APT30M70BVFR, APT30M70BVR

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