APT30M40LVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT30M40LVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 520
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 76
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 1500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO264
APT30M40LVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT30M40LVR
Datasheet (PDF)
4.1. Size:66K apt
apt30m40lvfr.pdf 
APT30M40LVFR300V 76A 0.040POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te
6.1. Size:116K apt
apt30m40b2vfrg.pdf
APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout
6.2. Size:116K apt
apt30m40b2vr.pdf
APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching
6.3. Size:70K apt
apt30m40jvr.pdf
APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc
6.4. Size:88K apt
apt30m40b2vrg.pdf
APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching
6.5. Size:73K apt
apt30m40jvfr.pdf
APT30M40JVFR300V 70A 0.040POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode
Datasheet: APT20M45BVR
, APT20M45SVFR
, APT20M45SVR
, APT30M19JVFR
, APT30M19JVR
, APT30M40JVFR
, APT30M40JVR
, APT30M40LVFR
, IRFZ44
, APT30M70BVFR
, APT30M70BVR
, APT30M85BVFR
, APT30M85BVR
, APT30M90AVR
, APT4012BVR
, APT4014BVR
, APT4014HVR
.
