STP7NM60N MOSFET Datasheet: N-Ch, 600V, 5A. Full specification with pinout and replacement list

STP7NM60N Specs and Replacement

Type Designator: STP7NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 24.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220

STP7NM60N substitution

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STP7NM60N datasheet

..1. Size:882K st
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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V ... See More ⇒

8.1. Size:969K st
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STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V ... See More ⇒

8.2. Size:424K st
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STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V ... See More ⇒

8.3. Size:426K st
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