All MOSFET. STP80NF55-06 Datasheet

 

STP80NF55-06 Datasheet and Replacement


   Type Designator: STP80NF55-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 1020 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
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STP80NF55-06 Datasheet (PDF)

 ..1. Size:447K  st
 stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STP80NF55-06

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

 ..2. Size:206K  inchange semiconductor
 stp80nf55-06.pdf pdf_icon

STP80NF55-06

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80NF55-06FEATURESTypical R (on)=0.005DSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:437K  st
 stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf pdf_icon

STP80NF55-06

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

 3.1. Size:362K  st
 stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

STP80NF55-06

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

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History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

Keywords - STP80NF55-06 MOSFET datasheet

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