STP8N65M5 Specs and Replacement

Type Designator: STP8N65M5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220

STP8N65M5 substitution

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STP8N65M5 datasheet

 ..3. Size:190K  inchange semiconductor
stp8n65m5.pdf pdf_icon

STP8N65M5

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP8N65M5 FEATURES Higher V rating DSS Excellent switching performance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒

 9.1. Size:698K  st
stb8nm60n std8nm60n-1 stf8nm60n stp8nm60n.pdf pdf_icon

STP8N65M5

STx8NM60N N-channel 600 V, 0.56 ,7 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V ... See More ⇒

Detailed specifications: STP80NF55-08, STP80NF55L-06, STP80NS04ZB, STP80PF55, STP85N15F4, STP85N3LH5, STP85NF55, STP85NF55L, 7N65, STP8NK100Z, STP8NK80Z, STP8NK80ZFP, STP8NM50, STP8NM50N, STP8NM60, STP8NM60ND, STP8NS25

Keywords - STP8N65M5 MOSFET specs

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