STP9NM60N Specs and Replacement

Type Designator: STP9NM60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.745 Ohm

Package: TO220

STP9NM60N substitution

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STP9NM60N datasheet

 ..1. Size:896K  st
std9nm60n stf9nm60n stp9nm60n.pdf pdf_icon

STP9NM60N

STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 , 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 1 STD9NM60N 1 TO-220FP TO-220 STF9NM60N 650 V ... See More ⇒

 8.1. Size:456K  st
stf9nm50n stp9nm50n.pdf pdf_icon

STP9NM60N

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) 3 2 3 STD9NM50N 550V ... See More ⇒

 8.2. Size:485K  st
std9nm50n std9nm50n-1 stp9nm50n stf9nm50n.pdf pdf_icon

STP9NM60N

STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) 3 2 3 STD9NM50N 550V ... See More ⇒

 9.1. Size:343K  st
stp9nc65.pdf pdf_icon

STP9NM60N

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Detailed specifications: STP95N4F3, STP9NK50Z, STP9NK60Z, STP9NK65Z, STP9NK65ZFP, STP9NK70Z, STP9NK70ZFP, STP9NK90Z, AON6380, STQ1HNK60R, STQ1NK60ZR, STQ2HNK60ZR-AP, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5

Keywords - STP9NM60N MOSFET specs

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