STQ1NK60ZR Datasheet and Replacement
Type Designator: STQ1NK60ZR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 17.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO92
STQ1NK60ZR substitution
STQ1NK60ZR Datasheet (PDF)
stn1nk60z stq1nk60zr.pdf

STN1NK60Z, STQ1NK60ZRN-channel 600 V, 13 typ., 0.3 A Zener-protected SuperMESH Power MOSFETs in SOT-223 and TO-92 packagesDatasheet - production dataFeaturesVDS RDS(on)max ID PTOTOrder codes4 STN1NK60Z 3.3 W600 V 15 0.3 ASTQ1NK60ZR-AP 3 W321 100% avalanche testedSOT-223TO-92 (Ammopak) Extremely high dv/dt capability Gate charge minimized
stq1nk60zr-ap.pdf

STN1NK60ZSTQ1NK60ZR-APN-channel 600 V, 13 , 0.8 A TO-92, SOT-223Zener-protected SuperMESH Power MOSFETFeaturesOrder codes VDSS RDS(on) ID PwSTQ1NK60ZR-AP 3 W600 V
std1lnk60z-1 stq1nk60zr-ap stn1nk60z.pdf

STD1LNK60Z-1STQ1NK60ZR-AP - STN1NK60ZN-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223Zener-Protected SuperMESH Power MOSFETFeaturesType VDSS RDS(on) ID PwSTD1LNK60Z-1 600V
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf

STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V
Datasheet: STP9NK60Z , STP9NK65Z , STP9NK65ZFP , STP9NK70Z , STP9NK70ZFP , STP9NK90Z , STP9NM60N , STQ1HNK60R , IRLB4132 , STQ2HNK60ZR-AP , STQ2NK60ZR-AP , STQ3N45K3-AP , STS10DN3LH5 , STS10N3LH5 , STS11N3LLH5 , STS11NF30L , STS12N3LLH5 .
History: ZVN0545ASTOB
Keywords - STQ1NK60ZR MOSFET datasheet
STQ1NK60ZR cross reference
STQ1NK60ZR equivalent finder
STQ1NK60ZR lookup
STQ1NK60ZR substitution
STQ1NK60ZR replacement
History: ZVN0545ASTOB



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