STQ1NK60ZR Specs and Replacement
Type Designator: STQ1NK60ZR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 17.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO92
STQ1NK60ZR substitution
- MOSFET ⓘ Cross-Reference Search
STQ1NK60ZR datasheet
stq1nk60zr-ap.pdf
STN1NK60Z STQ1NK60ZR-AP N-channel 600 V, 13 , 0.8 A TO-92, SOT-223 Zener-protected SuperMESH Power MOSFET Features Order codes VDSS RDS(on) ID Pw STQ1NK60ZR-AP 3 W 600 V ... See More ⇒
std1lnk60z-1 stq1nk60zr-ap stn1nk60z.pdf
STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESH Power MOSFET Features Type VDSS RDS(on) ID Pw STD1LNK60Z-1 600V ... See More ⇒
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf
STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw 2 STQ1NK80ZR-AP 800 V ... See More ⇒
Detailed specifications: STP9NK60Z, STP9NK65Z, STP9NK65ZFP, STP9NK70Z, STP9NK70ZFP, STP9NK90Z, STP9NM60N, STQ1HNK60R, CS150N03A8, STQ2HNK60ZR-AP, STQ2NK60ZR-AP, STQ3N45K3-AP, STS10DN3LH5, STS10N3LH5, STS11N3LLH5, STS11NF30L, STS12N3LLH5
Keywords - STQ1NK60ZR MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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