All MOSFET. STU11NM60ND Datasheet

 

STU11NM60ND MOSFET. Datasheet pdf. Equivalent

Type Designator: STU11NM60ND

Marking Code: 11NM60ND

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 44 pF

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO251

STU11NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU11NM60ND Datasheet (PDF)

0.1. std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf Size:750K _st

STU11NM60ND
STU11NM60ND

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I²PAK STI11NM60ND 650 V < 0.45 Ω 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allo

8.1. stb11n65m5 stf11n65m5 stp11n65m5 stu11n65m5.pdf Size:1276K _st

STU11NM60ND
STU11NM60ND

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V < 0.48 Ω 9 A STP11N65M5 3 2 STU

8.2. stu11nb60.pdf Size:242K _st

STU11NM60ND
STU11NM60ND

STU11NB60 N-CHANNEL 600V - 0.5Ω - 11A Max220 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STU11NB60 600V < 0.6Ω 11 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 2 GATE CHARGE MINIMIZED 1 DESCRIPTION Max220 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vance

 8.3. std11n65m2 stp11n65m2 stu11n65m2.pdf Size:1172K _st

STU11NM60ND
STU11NM60ND

STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 Ω 7 A 2 1 STU11N65M2 TO-220 TAB • Extremely low gate charge • Lower RDS(on) x area vs previous generation

8.4. stu11nc60.pdf Size:238K _st

STU11NM60ND
STU11NM60ND

STU11NC60 N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STU11NC60 600V < 0.55Ω 11 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 2 GATE CHARGE MINIMIZED 1 Max220 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finem

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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