STU11NM60ND MOSFET Datasheet: N-Ch, 600V, 10A. Full specification with pinout and replacement list

STU11NM60ND Specs and Replacement

   Type Designator: STU11NM60ND
   Marking Code: 11NM60ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO251

STU11NM60ND substitution

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STU11NM60ND datasheet

..1. Size:750K st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf pdf_icon

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I PAK STI11NM60ND 650 V ... See More ⇒

8.1. Size:1172K st
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STD11N65M2, STP11N65M2, STU11N65M2 N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB TAB 3 Order codes VDS RDS(on) max ID 1 STD11N65M2 DPAK 3 STP11N65M2 650 V 0.67 7 A 2 1 STU11N65M2 TO-220 TAB Extremely low gate charge Lower RDS(on) x area vs previous generation ... See More ⇒

8.2. Size:1276K st
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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB TAB 2 VDSS @ RDS(on) 2 3 Order codes ID 3 1 TJmax max 1 3 2 DPAK D2PAK 1 STB11N65M5 TO-220FP STD11N65M5 TAB STF11N65M5 710 V ... See More ⇒

8.3. Size:242K st
stu11nb60.pdf pdf_icon