APT4016BVR MOSFET. Datasheet pdf. Equivalent
Type Designator: APT4016BVR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 135 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO247
APT4016BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT4016BVR Datasheet (PDF)
apt4016bvr.pdf
APT4016BVR400V 27A 0.160POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt4016bvfrg apt4016svfrg.pdf
400V 27A 0.16APT4016BVFR APT4016SVFRAPT4016BVFRG* APT4016SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRFREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVF
apt4016bn.pdf
DTO-247GAPT4016BN 400V 31.0A 0.16SAPT4018BN 400V 29.0A 0.18POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4016BN 4018BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C31 29AmpsIDM Pulsed Drain Current 1124 116
apt4012bvfrg apt4012svfrg.pdf
APT4012BVFRAPT4012SVFR400V 37A 0.120BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt4014bvr.pdf
APT4014BVR400V 28A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt4018bn.pdf
DTO-247GAPT4016BN 400V 31.0A 0.16SAPT4018BN 400V 29.0A 0.18POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 4016BN 4018BN UNITVDSS Drain-Source Voltage400 400 VoltsID Continuous Drain Current @ TC = 25C31 29AmpsIDM Pulsed Drain Current 1124 116
apt4018hvr.pdf
APT4018HVR400V 22A 0.180POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt4014bvfrg apt4014svfrg.pdf
APT4014BVFRAPT4014SVFR400V 28A 0.140BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt4012bvr.pdf
APT4012BVR400V 37A 0.120POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt4015avr.pdf
APT4015AVR400V 25.5A 0.150POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt4014hvr.pdf
APT4014HVR400V 28A 0.140POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt4014bvfr.pdf
isc N-Channel MOSFET Transistor APT4014BVFRFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: APT30M85BVFR , APT30M85BVR , APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , APT4016BN , IRF630 , APT4018HVR , APT4020BN , APT4020BVR , APT4030CNR , APT40M35JVR , APT40M35PVR , APT40M42JN , APT40M70JVR .
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