STW160N75F3 MOSFET. Datasheet pdf. Equivalent

STB160N75F3STP160N75F3 - STW160N75F3N-channel 75V - 3.5m - 120A - TO-220 - TO-247 - D2PAKSTripFET Power MOSFETFeaturesRDS(on)Type VDSS ID(max.)3STB160N75F3 75V 3.7 m120 A(1) 32211STP160N75F3 75V 4 m TO-220120 A(1)TO-247STW160N75F3 75V 4 m120 A(1)1. Current limited by package31 Ultra low on-resistanceDPAK 100% Avalanche tes

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.240 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.230 , 12 A MDmesh V Power MOSFETin TO-220FP, IPAK, TO-220, IPAK, TO-247FeaturesTABTABVDSS @ RDS(on) Type IDTJmax max32 3 3211 2STF16N65M51TO-220FPTO-220STI16N65M5 IPAKSTP16N65M5 710 V

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

2STW1693High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured in Figure 1. Internal schematic diagramlow voltage planar technology using

STW16NB60N-CHANNEL 600V - 0.3 - 16ATO-247PowerMesh MOSFETTYPE VDSS RDS(on) IDSTW16NB60 600V

STW18NB40STH18NB40FIN-CHANNEL 400V - 0.19 - 18.4A TO-247/ISOWATT218 PowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTW18NB40 400 V

2STW1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear Figure 1. Internal schema

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

STW16NA60N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATA TYPE VDSS RDS(on) IDSTW16NA60 600 V

STW16NA40STH16NA40FIN - CHANNEL 400V - 0.21 - 16A - TO-247/ISOWATT218POWER MOS TRANSISTORSPRELIMINARY DATATYPE VDSS RDS(on) IDSTW16NA40 400 V

STF16NK60ZSTP16NK60Z, STW16NK60ZN-channel 600 V, 038 , 14 A, TO-220, TO-220FP, TO-247Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF16NK60Z 600 V

STF16N65M5, STI16N65M5STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin TO-220FP, TO-220, IPAK, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max33 322 21STF16N65M51 1TO-220STI16N65M5 TO-247 TO-220FPSTP16N65M5 710 V