STW26NM60N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STW26NM60N
Marking Code: 26NM60N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165
Ohm
Package:
TO247
STW26NM60N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW26NM60N
Datasheet (PDF)
..1. Size:1134K st
stb26nm60n stf26nm60n stp26nm60n stw26nm60n.pdf 
STB26NM60N, STF26NM60NSTP26NM60N, STW26NM60NN-channel 600 V, 0.135 , 20 A MDmesh II Power MOSFETD2PAK, TO-220FP, TO-220, TO-247FeaturesRDS(on) Type VDSS IDmax32312STB26NM60N 600 V
..2. Size:781K st
stw26nm60n.pdf
STW26NM60N N-channel 600 V, 0.135 typ., 20 A MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max I DS DS(on) DSTW26NM60N 600 V 0.165 20 A 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 21Applications Switching applications TO-247Description Figure 1
0.1. Size:1344K st
stb26nm60nd stf26nm60nd stp26nm60nd stw26nm60nd.pdf
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60NDN-channel 600 V, 0.145 typ., 21 A, FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ Tjmax RDS(on) max ID31STB26NM60ND23D PAK21 STF26NM60ND650 V 0.175 21 ATO-220FPSTP26NM60NDTABSTW26NM60ND 100% avalanche tested3 32
5.1. Size:263K st
stw26nm60.pdf
STW26NM60N-CHANNEL 600V - 0.125 - 30A TO-247MDmesh MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTW26NM60 600 V
7.1. Size:562K st
stw26nm50.pdf
STW26NM50N-channel 500 V, 0.10 , 30 A TO-247MDmesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW26NM50 500 V
7.2. Size:261K inchange semiconductor
stw26nm50.pdf
isc N-Channel MOSFET Transistor STW26NM50FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gat
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