STW34NM60ND MOSFET. Datasheet pdf. Equivalent
Type Designator: STW34NM60ND
Marking Code: 34NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80.4 nC
trⓘ - Rise Time: 53.4 nS
Cossⓘ - Output Capacitance: 168 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
STW34NM60ND Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW34NM60ND Datasheet (PDF)
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: P2804HVG
History: P2804HVG
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