STW3N150 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW3N150
Marking Code: 3N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29.3 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 102 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO247
STW3N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW3N150 Datasheet (PDF)
stfw3n150 sth3n150-2 stp3n150 stw3n150.pdf
STFW3N150, STH3N150-2 STP3N150, STW3N150DatasheetN-channel 1500 V, 2.5 A, 6 typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packagesFeaturesTABVDS RDS(on) max. ID PTOTOrder codes23 1 3STFW3N150 63 W22H PAK-21STH3N150-2TO-3PF1500 V 9 2.5 ASTP3N150 140 WTABSTW3N15033 100% avalanche tested2 2 1 1 TO-220
stfw3n150 stp3n150 stw3n150.pdf
STFW3N150STP3N150, STW3N150N-channel 1500 V, 6 , 2.5 A, PowerMESH Power MOSFETin TO-220, TO-247, TO-3PFFeaturesRDS(on) Type VDSS ID PTOTmax.STFW3N150 1500 V
stfw3n170 stw3n170.pdf
STFW3N170, STW3N170N-channel 1700 V, 8 typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDSTFW3N1701111700 V 12 2.3 ASTW3N170332 21 1 Intrinsic capacitances and Qg minimizedTO-247TO-3PF TO-3PF for higher creepage between leads High speed switching 10
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NDB6051L
History: NDB6051L
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918