STW43NM60N Datasheet and Replacement
Type Designator: STW43NM60N
Marking Code: 43NM60ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 145 nC
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO247
STW43NM60N substitution
STW43NM60N Datasheet (PDF)
stw43nm60n.pdf

STW43NM60NN-channel 600 V, 0.075 , 35 A MDmesh II Power MOSFETTO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) maxSTW43NM60N 650 V
stw43nm60nd.pdf

STW43NM60NDN-channel 600 V, 0.075 , 35 A TO-247FDmesh Power MOSFET (with fast diode)FeaturesVDSS @ RDS(on) Type IDTJMAX maxSTW43NM60ND 650 V
stw43nm50n.pdf

STW43NM50NN-channel 500 V, 0.070 , 37 A MDmesh II Power MOSFETTO-247FeaturesVDSS @ RDS(on) Type IDTjmax maxSTW43NM50N 550 V
stw43n60dm2.pdf

STW43N60DM2 N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ DSR DS(on)Order code I P D TOTmax. TJmax. STW43N60DM2 650 V 0.093 34 A 250 W Fast-recovery body diode 3 Extremely low gate charge and input 2capacitance 1 Low on-resistance 100% avalanche tested TO-2
Datasheet: STW34NB20 , STW34NM60N , STW34NM60ND , STW35N65M5 , STW36NM60N , STW3N150 , STW40NF20 , STW42N65M5 , IRF9640 , STW43NM60ND , STW45NM50 , STW45NM50FD , STW45NM60 , STW45NM60D , STW47NM60ND , STW48NM60N , STW4N150 .
History: STW36NM60N | AP25N10GJ-HF | 2SK3355-S
Keywords - STW43NM60N MOSFET datasheet
STW43NM60N cross reference
STW43NM60N equivalent finder
STW43NM60N lookup
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History: STW36NM60N | AP25N10GJ-HF | 2SK3355-S



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