BSB012NE2LX Datasheet and Replacement
Type Designator: BSB012NE2LX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: WDSON2
BSB012NE2LX substitution
BSB012NE2LX Datasheet (PDF)
bsb012ne2lx.pdf

n-Channel Power MOSFETOptiMOSBSB012NE2LX Data Sheet2.3, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB012NE2LX1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS
bsb012ne2lxi.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXICanPAK MX-size1 DescriptionFeatures Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (
bsb012n03lx3.pdf

BSB012N03LX3 G OptiMOSTM3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for high switching frequency DC/DC converterR 1.2mDS(on),max Very low on-resistance RDS(on)I 180 AD Excellent gate charge x R product (FOM)DS(on)MG-WDSON-2 Low parasitic inductance Low profile (
Datasheet: STY140NS10 , STY30NK90Z , STY60NK30Z , STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , IRFP260 , BSB014N04LX3G , BSB015N04NX3G , BSB017N03LX3G , BSB019N03LXG , BSB024N03LXG , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS .
History: APT3580BN | RSR030N06
Keywords - BSB012NE2LX MOSFET datasheet
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History: APT3580BN | RSR030N06



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