BSC014N03LSG Specs and Replacement
Type Designator: BSC014N03LSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 2600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: TDSON8
BSC014N03LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC014N03LSG datasheet
bsc014n03lsg.pdf
BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 1.4 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒
bsc014n03ls .pdf
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bsc014n03ls.pdf
BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 1.4 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒
bsc014n03msg.pdf
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Detailed specifications: BSB015N04NX3G, BSB017N03LX3G, BSB019N03LXG, BSB024N03LXG, BSB028N06NN3G, BSB053N03LPG, BSC010NE2LS, BSC011N03LS, SPP20N60C3, BSC014N03MSG, BSC016N03LSG, BSC016N03MSG, BSC016N04LSG, BSC017N04NSG, BSC018N04LSG, BSC018NE2LS, BSC019N02KSG
Keywords - BSC014N03LSG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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