BSC030P03NS3G Specs and Replacement
Type Designator: BSC030P03NS3G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 25.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 4690 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TDSON8
BSC030P03NS3G substitution
- MOSFET ⓘ Cross-Reference Search
BSC030P03NS3G datasheet
bsc030p03ns3g.pdf
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bsc030n03ls .pdf
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bsc030n04nsg.pdf
BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary V 40 V Features DS R 3.0 m Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S... See More ⇒
bsc030n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re... See More ⇒
Detailed specifications: BSC025N03LSG, BSC025N03MSG, BSC026N02KSG, BSC027N04LSG, BSC028N06LS3G, BSC030N03LSG, BSC030N03MSG, BSC030N04NSG, 10N65, BSC031N06NS3G, BSC032N03SG, BSC034N03LSG, BSC035N04LSG, BSC042N03LSG, BSC042N03MSG, BSC042N03SG, BSC042NE7NS3G
Keywords - BSC030P03NS3G MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRF8010S | APM2513NU | 2SK3364-01 | 2SK3857MFV
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