BSC050N03MSG Specs and Replacement
Type Designator: BSC050N03MSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TDSON8
BSC050N03MSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC050N03MSG datasheet
bsc050n03msg5.pdf
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bsc050n03ms.pdf
BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒
bsc050n03ls.pdf
BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
bsc050n03ls .pdf
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Detailed specifications: BSC035N04LSG, BSC042N03LSG, BSC042N03MSG, BSC042N03SG, BSC042NE7NS3G, BSC046N02KSG, BSC047N08NS3G, BSC050N03LSG, 8N60, BSC050N04LSG, BSC050NE2LS, BSC052N03LS, BSC052N03SG, BSC054N04NSG, BSC057N03LSG, BSC057N03MSG, BSC057N08NS3G
Keywords - BSC050N03MSG MOSFET specs
BSC050N03MSG cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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