BSC057N03LSG MOSFET Datasheet: N-Ch, 30V, 17A. Full specification with pinout and replacement list

BSC057N03LSG Specs and Replacement

Type Designator: BSC057N03LSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TDSON8

BSC057N03LSG substitution

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BSC057N03LSG datasheet

..1. Size:521K infineon
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BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super... See More ⇒

3.1. Size:482K infineon
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3.2. Size:693K infineon
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5.1. Size:486K infineon
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BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM... See More ⇒