BSC060P03NS3EG Datasheet and Replacement
Type Designator: BSC060P03NS3EG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 17.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 139 nS
Cossⓘ - Output Capacitance: 2110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TDSON8
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BSC060P03NS3EG Datasheet (PDF)
bsc060p03ns3eg.pdf

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bsc067n06ls3g.pdf

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PDP0959 | AP30H80Q | R6006JND3 | 1N70Z | PTP20N70A | IRF9530SMD | STL35N6F3
Keywords - BSC060P03NS3EG MOSFET datasheet
BSC060P03NS3EG cross reference
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History: PDP0959 | AP30H80Q | R6006JND3 | 1N70Z | PTP20N70A | IRF9530SMD | STL35N6F3



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