APT5010LVR Specs and Replacement

Type Designator: APT5010LVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO264

APT5010LVR substitution

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APT5010LVR datasheet

 ..1. Size:64K  apt
apt5010lvr.pdf pdf_icon

APT5010LVR

APT5010LVR 500V 47A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 ..2. Size:255K  inchange semiconductor
apt5010lvr.pdf pdf_icon

APT5010LVR

isc N-Channel MOSFET Transistor APT5010LVR FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 5.1. Size:66K  apt
apt5010lvfr.pdf pdf_icon

APT5010LVR

APT5010LVFR 500V 47A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 5.2. Size:255K  inchange semiconductor
apt5010lvfr.pdf pdf_icon

APT5010LVR

isc N-Channel MOSFET Transistor APT5010LVFR FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

Detailed specifications: APT40M75JN, APT40M82WVR, APT5010B2VFR, APT5010B2VR, APT5010JN, APT5010JVFR, APT5010JVR, APT5010LVFR, 4435, APT5012WVR, APT5014B2VR, APT5014LVR, APT5015BVR, APT5017BVFR, APT5017BVR, APT5017SVR, APT5019HVR

Keywords - APT5010LVR MOSFET specs

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