All MOSFET. BSC100N03LSG Datasheet

 

BSC100N03LSG Datasheet and Replacement


   Type Designator: BSC100N03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TDSON8
 

 BSC100N03LSG substitution

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BSC100N03LSG Datasheet (PDF)

 3.1. Size:689K  infineon
 bsc100n03ls.pdf pdf_icon

BSC100N03LSG

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 5.1. Size:524K  infineon
 bsc100n03msg.pdf pdf_icon

BSC100N03LSG

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

 5.2. Size:485K  infineon
 bsc100n03ms.pdf pdf_icon

BSC100N03LSG

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

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Datasheet: BSC0901NS , BSC0902NS , BSC0908NS , BSC0909NS , BSC090N03LSG , BSC090N03MSG , BSC093N04LSG , BSC094N03SG , IRF640 , BSC100N03MSG , BSC100N06LS3G , BSC100N10NSFG , BSC105N10LSFG , BSC109N10NS3G , BSC110N06NS3G , BSC118N10NSG , BSC119N03SG .

History: HM5853 | AUIRFR3504 | UTT18P06 | APT4018BN | GP2M004A065XG | AP8N3R5CMT | HM17N10K

Keywords - BSC100N03LSG MOSFET datasheet

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 BSC100N03LSG equivalent finder
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