BSC340N08NS3G Specs and Replacement
Type Designator: BSC340N08NS3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 156 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TDSON8
BSC340N08NS3G substitution
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BSC340N08NS3G datasheet
bsc340n08ns3g bsc340n08ns3g rev2.6.pdf
$ $ C "9@/; %;+877+;B Features 80 V DS Q #4513I CG9D389>7 4 m DS(on) max Q ( @D9=9J54 D538>?F5BD5BC 2 A D Q H35>5?B=1... See More ⇒
Detailed specifications: BSC196N10NSG, BSC200P03LSG, BSC205N10LSG, BSC22DN20NS3G, BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG, BSC320N20NS3G, IRFP260, BSC360N15NS3G, BSC440N10NS3G, BSC520N15NS3G, BSC600N25NS3G, BSC750N10NDG, BSC900N20NS3G, BSD223P, BSD314SPE
Keywords - BSC340N08NS3G MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: GT4953 | BSC900N20NS3G
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