BSO604NS2 Datasheet and Replacement
Type Designator: BSO604NS2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 154 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SO8
BSO604NS2 substitution
BSO604NS2 Datasheet (PDF)
bso604ns2 bso604ns2 ds-11.pdf

BSO604NS2 Green Product (RoHS compliant) AEC Qualified G 25 On Request
bso604ns2.pdf

BSO604NS2www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe
Datasheet: BSF083N03LQG , BSL207SP , BSL211SP , BSL215P , BSL307SP , BSL308PE , BSL314PE , BSL315P , CS150N03A8 , BSO033N03MSG , BSO040N03MSG , BSO051N03MSG , BSO052N03S , BSO064N03S , BSO065N03MSG , BSO072N03S , BSO080P03NS3G .
History: TK5A65W | RUH1H139R | HM1P10MR | BSC019N04NSG | TMAN10N80 | SI2310A | WMO60P03TS
Keywords - BSO604NS2 MOSFET datasheet
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History: TK5A65W | RUH1H139R | HM1P10MR | BSC019N04NSG | TMAN10N80 | SI2310A | WMO60P03TS



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