APT5017SVR PDF and Equivalents Search

 ..1. Size:63K  apt
 apt5017svr.pdf

APT5017SVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

 5.1. Size:62K  apt
 apt5017svfrg.pdf

APT5017BVFR APT5017SVFR 500V 30A 0.170 POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Fast... See More ⇒

 7.1. Size:34K  apt
 apt5017blc.pdf

APT5017BLC APT5017SLC 500V 30A 0.170W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc... See More ⇒

 7.2. Size:60K  apt
 apt5017bvr.pdf

APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

 7.3. Size:62K  apt
 apt5017bvfr.pdf

APT5017BVFR 500V 30A 0.170 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test... See More ⇒

 7.4. Size:63K  apt
 apt5017.pdf

APT5017SVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower L... See More ⇒

 7.5. Size:375K  inchange semiconductor
 apt5017bvr.pdf

isc N-Channel MOSFET Transistor APT5017BVR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 7.6. Size:375K  inchange semiconductor
 apt5017bvfr.pdf

isc N-Channel MOSFET Transistor APT5017BVFR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒