All MOSFET. BSO080P03NS3G Datasheet

 

BSO080P03NS3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSO080P03NS3G
   Marking Code: 080P3NS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.1 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SO8

 BSO080P03NS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSO080P03NS3G Datasheet (PDF)

 ..1. Size:533K  infineon
 bso080p03ns3g.pdf

BSO080P03NS3G BSO080P03NS3G

BSO080P03NS3 GOptiMOS3 P3-Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 8.0mW Qualified according JEDEC1) for target applicationsVGS=-6 V 11.4 150C operating temperatureID -14.8 A V =25 V, specially suited for notebook applicationsGS Pb-free plating; RoHS compliantPG-DSO-8 applications: batter

 2.1. Size:673K  infineon
 bso080p03ns3e g.pdf

BSO080P03NS3G BSO080P03NS3G

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 mWDS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8

 2.2. Size:652K  infineon
 bso080p03ns3 g 2.2.pdf

BSO080P03NS3G BSO080P03NS3G

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 m DS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8Q "2=@86? 7B66

 5.1. Size:323K  infineon
 bso080p03s1.pdf

BSO080P03NS3G BSO080P03NS3G

BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8mDS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Halo

 5.2. Size:308K  infineon
 bso080p03sh.pdf

BSO080P03NS3G BSO080P03NS3G

BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8m DS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Haloge

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSP50R140S | STP70L60 | NCE70N600K | SE12060GA

 

 
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