BSO130P03SH Datasheet and Replacement
Type Designator: BSO130P03SH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 9.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 708 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SO8
BSO130P03SH substitution
BSO130P03SH Datasheet (PDF)
bso130p03sh.pdf

BSO130P03S HOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 13mDS(on),max Enhancement modeI -11.7 AD Logic levelPG-DSO-8 150C operating temperature qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking Lead fr
bso130p03s.pdf

BSO130P03SOptiMOSTM-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 13mDS(on),max Enhancement modeI -11.3 AD Logic level 150C operating temperature Avalanche ratedP-DSO-8 dv /dt rated Ideal for fast switching buck converterType Package MarkingBSO130P03S P-DSO-8 130P3SMaximum ratings, at T =25 C, unless otherwise
bso130n03ms.pdf

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Datasheet: BSO080P03NS3EG , BSO080P03SH , BSO083N03MSG , BSO094N03S , BSO110N03MSG , BSO119N03S , BSO130N03MSG , BSO130P03S , K2611 , BSO150N03 , BSO150N03MDG , BSO200N03 , BSO200N03S , BSO200P03SH , BSO201SPH , BSO203PH , BSO203SPH .
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