BSS209PW MOSFET. Datasheet pdf. Equivalent

   Type Designator: BSS209PW
   Marking Code: X3s
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SOT323

BSS209PW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS