All MOSFET. BSS314PE Datasheet

 

BSS314PE MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS314PE
   Marking Code: Ygs
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.9 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23

 BSS314PE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS314PE Datasheet (PDF)

 ..1. Size:488K  infineon
 bss314pe.pdf

BSS314PE BSS314PE

BSS314PE 9

 ..2. Size:529K  tysemi
 bss314pe.pdf

BSS314PE BSS314PE

Product specificationBSS314PEOptiMOS-P 3 Small-Signal-TransistorProduct Summary FeaturesVDS 30 V P-channelRDS(on),max VGS=-10 V 140 mW Enhancement modeVGS=-4.5 V 230 Logic level (4.5V rated)ID -1.5 A ESD protectedPG-SOT-23 Qualified according AEC Q1013 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 1

 9.1. Size:559K  infineon
 bss315p.pdf

BSS314PE BSS314PE

BSS315P#

 9.2. Size:231K  infineon
 bss316n.pdf

BSS314PE BSS314PE

BSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and R

 9.3. Size:126K  tysemi
 bss315p.pdf

BSS314PE BSS314PE

Product specificationBSS315POptiMOS-P 2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =10 V 150mDS(on),max GSV =4.5 V 270 Enhancement modeGSI -1.5 ADLogic level (4.5V rated) Avalanche ratedPG-SOT-23 Qualified according to AEC Q1013100% lead-free; RoHS compliantHalogen-free according to AEC61249-2-211

 9.4. Size:131K  tysemi
 bss316n.pdf

BSS314PE BSS314PE

Product specificationBSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112

 9.5. Size:1723K  cn vbsemi
 bss316n.pdf

BSS314PE BSS314PE

BSS316Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMN2112SN

 

 
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