BSZ019N03LS
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ019N03LS
Marking Code: 019N03L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 6.8
nS
Cossⓘ -
Output Capacitance: 960
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
TSDSON8
BSZ019N03LS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ019N03LS
Datasheet (PDF)
..1. Size:1404K infineon
bsz019n03ls.pdf 
n-Channel Power MOSFETOptiMOSBSZ019N03LS Data Sheet2.1, 2011-09-21Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ019N03LS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS
9.1. Size:1216K infineon
bsz011ne2ls5i.pdf
BSZ011NE2LS5IMOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5VDS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Pr
9.2. Size:1646K infineon
bsz013ne2ls5i.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode
9.3. Size:1609K infineon
bsz014ne2ls5if.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Monolithic integrated Schottky like diode Ve
9.4. Size:669K infineon
bsz018ne2ls.pdf
BSZ018NE2LSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 1.8 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.4 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 Very low on-resistance R @ V =4.5 V
9.5. Size:1215K infineon
bsz010ne2ls5.pdf
BSZ010NE2LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for OR-ing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qual
9.6. Size:625K infineon
bsz018ne2lsi.pdf
BSZ018NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diodeA ID 40 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 23 nC 100% avalanche tested36 nC QG(0V..10V) N-channelPG-TSDSON-8 (fused leads) Qualified according to
9.7. Size:1029K infineon
bsz018n04ls6.pdf
BSZ018N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C ratedProduct validatio
9.8. Size:1650K infineon
bsz017ne2ls5i.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode
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