All MOSFET. BSZ058N03LSG Datasheet

 

BSZ058N03LSG Datasheet and Replacement


   Type Designator: BSZ058N03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TSDSON8
      - MOSFET Cross-Reference Search

 

BSZ058N03LSG Datasheet (PDF)

 ..1. Size:619K  infineon
 bsz058n03lsg.pdf pdf_icon

BSZ058N03LSG

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 3.1. Size:616K  infineon
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BSZ058N03LSG

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 5.1. Size:646K  infineon
 bsz058n03msg.pdf pdf_icon

BSZ058N03LSG

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 5.2. Size:644K  infineon
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BSZ058N03LSG

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