All MOSFET. BSZ058N03LSG Datasheet

 

BSZ058N03LSG Datasheet and Replacement


   Type Designator: BSZ058N03LSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TSDSON8
 

 BSZ058N03LSG substitution

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BSZ058N03LSG Datasheet (PDF)

 ..1. Size:619K  infineon
 bsz058n03lsg.pdf pdf_icon

BSZ058N03LSG

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 3.1. Size:616K  infineon
 bsz058n03ls.pdf pdf_icon

BSZ058N03LSG

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 5.1. Size:646K  infineon
 bsz058n03msg.pdf pdf_icon

BSZ058N03LSG

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 5.2. Size:644K  infineon
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BSZ058N03LSG

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Datasheet: BSV236SP , BSZ019N03LS , BSZ035N03LSG , BSZ035N03MSG , BSZ040N04LSG , BSZ042N04NSG , BSZ050N03LSG , BSZ050N03MSG , K3569 , BSZ058N03MSG , BSZ067N06LS3G , BSZ076N06NS3G , BSZ086P03NS3G , BSZ086P03NS3EG , BSZ088N03LSG , BSZ088N03MSG , BSZ0909NS .

History: GSM3400

Keywords - BSZ058N03LSG MOSFET datasheet

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