BSZ105N04NSG PDF and Equivalents Search

 

BSZ105N04NSG Specs and Replacement

Type Designator: BSZ105N04NSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.2 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TSDSON8

BSZ105N04NSG substitution

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BSZ105N04NSG datasheet

 ..1. Size:621K  infineon
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 9.1. Size:628K  infineon
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 9.2. Size:467K  infineon
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 9.3. Size:691K  infineon
bsz100n06ns.pdf pdf_icon

BSZ105N04NSG

Type BSZ100N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 10 mW Superior thermal resistance ID A 40 N-channel QOSS nC 14 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 12 Pb-free lead plating; RoHS compliant PG-TS... See More ⇒

Detailed specifications: BSZ086P03NS3EG, BSZ088N03LSG, BSZ088N03MSG, BSZ0909NS, BSZ097N04LSG, BSZ100N03LSG, BSZ100N03MSG, BSZ100N06LS3G, SKD502T, BSZ110N06NS3G, BSZ120P03NS3G, BSZ120P03NS3EG, BSZ123N08NS3G, BSZ12DN20NS3G, BSZ130N03LSG, BSZ130N03MSG, BSZ160N10NS3G

Keywords - BSZ105N04NSG MOSFET specs

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