All MOSFET. BSZ105N04NSG Datasheet

 

BSZ105N04NSG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ105N04NSG
   Marking Code: 105N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 1.2 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TSDSON8

 BSZ105N04NSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ105N04NSG Datasheet (PDF)

 ..1. Size:621K  infineon
 bsz105n04nsg.pdf

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 9.3. Size:691K  infineon
 bsz100n06ns.pdf

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TypeBSZ100N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 10 mW Superior thermal resistanceID A 40 N-channelQOSS nC 14 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 12 Pb-free lead plating; RoHS compliantPG-TS

 9.4. Size:631K  infineon
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTMS4802N

 

 
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