BSZ120P03NS3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ120P03NS3G
Marking Code: 120P3N
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.1
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 1090
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TSDSON8
BSZ120P03NS3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ120P03NS3G
Datasheet (PDF)
..1. Size:614K infineon
bsz120p03ns3g bsz120p03ns3g 21.pdf
&+ $ "& '! $>E $ $ '>.;?6?@ VDSFeatures 12m DS(on) maxR C:?8=6 ) 92??6= :? , ( 1) 40 AR * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C DPGTSDSON8R U @A6B2D:?8 D6>A6B2DEB6R . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DR 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8R "2=@86? 7B66 244@B5:?8 D@ # Type
2.1. Size:298K infineon
bsz120p03ns3eg2.1.pdf
BSZ120P03NS3E GProduct SummaryOptiMOSTM P3 Power-TransistorV -30 VDSFeaturesR 12mDS(on),max single P-Channel in S3O8I -40 A Qualified according JEDEC1) for target applications DPG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant ESD protected applications: battery mana
9.1. Size:571K infineon
bsz12dn20ns3 bsz12dn20ns3g.pdf
TypeBSZ12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125mW N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
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