BSZ12DN20NS3G Datasheet and Replacement
Type Designator: BSZ12DN20NS3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 39 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TSDSON8
BSZ12DN20NS3G Datasheet (PDF)
bsz12dn20ns3 bsz12dn20ns3g.pdf

TypeBSZ12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125mW N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
bsz120p03ns3eg2.1.pdf

BSZ120P03NS3E GProduct SummaryOptiMOSTM P3 Power-TransistorV -30 VDSFeaturesR 12mDS(on),max single P-Channel in S3O8I -40 A Qualified according JEDEC1) for target applications DPG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant ESD protected applications: battery mana
bsz120p03ns3g bsz120p03ns3g 21.pdf

&+ $ "& '! $>E $ $ '>.;?6?@ VDSFeatures 12m DS(on) maxR C:?8=6 ) 92??6= :? , ( 1) 40 AR * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C DPGTSDSON8R U @A6B2D:?8 D6>A6B2DEB6R . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DR 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8R "2=@86? 7B66 244@B5:?8 D@ # Type
Datasheet: BSZ100N03LSG , BSZ100N03MSG , BSZ100N06LS3G , BSZ105N04NSG , BSZ110N06NS3G , BSZ120P03NS3G , BSZ120P03NS3EG , BSZ123N08NS3G , 4435 , BSZ130N03LSG , BSZ130N03MSG , BSZ160N10NS3G , BSZ165N04NSG , BSZ16DN25NS3G , BSZ180P03NS3G , BSZ180P03NS3EG , BSZ22DN20NS3G .
Keywords - BSZ12DN20NS3G MOSFET datasheet
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