BSZ12DN20NS3G MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ12DN20NS3G
Marking Code: 12DN20N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 39 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TSDSON8
BSZ12DN20NS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ12DN20NS3G Datasheet (PDF)
bsz12dn20ns3 bsz12dn20ns3g.pdf
TypeBSZ12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125mW N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
bsz120p03ns3eg2.1.pdf
BSZ120P03NS3E GProduct SummaryOptiMOSTM P3 Power-TransistorV -30 VDSFeaturesR 12mDS(on),max single P-Channel in S3O8I -40 A Qualified according JEDEC1) for target applications DPG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant ESD protected applications: battery mana
bsz120p03ns3g bsz120p03ns3g 21.pdf
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918