APT5025BN MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5025BN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 83 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 522 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO247
APT5025BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5025BN Datasheet (PDF)
apt5025bn.pdf
DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V
apt5028svr.pdf
APT5028SVR500V 20A 0.280POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt5022bn.pdf
DTO-247GAPT5020BN 500V 28.0A 0.20SAPT5022BN 500V 27.0A 0.22POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5020BN 5022BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C28 27AmpsIDM Pulsed Drain Current 1112 108
apt5024bfll.pdf
APT5024BFLLAPT5024SFLL500V 22A 0.240WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas
apt5024bll apt5024sll.pdf
APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
apt5024svr.pdf
APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak
apt5026hvr.pdf
APT5026HVR500V 18.5A 0.260POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt5020svr.pdf
APT5020SVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le
apt5020bn.pdf
DTO-247GAPT5020BN 500V 28.0A 0.20SAPT5022BN 500V 27.0A 0.22POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5020BN 5022BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C28 27AmpsIDM Pulsed Drain Current 1112 108
apt5024bvr.pdf
APT5024BVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt5028bvr.pdf
APT5028BVR500V 20A 0.280POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt5020bvfr.pdf
APT5020BVFR500V 26A 0.200POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt5022avr.pdf
APT5022AVR500V 21A 0.220POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower L
apt5020svfr.pdf
APT5020SVFR500V 26A 0.200POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt5024svfrg.pdf
APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.
apt5020blc.pdf
APT5020BLCAPT5020SLC500V 26A 0.200WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast switc
apt5020bvr.pdf
APT5020BVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt5024bllg.pdf
APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
apt5024bvfr.pdf
APT5024BVFR500V 22A 0.240POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt5024avr.pdf
APT5024AVR500V 18.5A 0.240POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt5020.pdf
APT5020SVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Le
apt5024sfll apt5024sfllg.pdf
APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
apt5024bfll.pdf
isc N-Channel MOSFET Transistor APT5024BFLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt5024bvr.pdf
isc N-Channel MOSFET Transistor APT5024BVRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5028bvr.pdf
isc N-Channel MOSFET Transistor APT5028BVRFEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.28(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5020bvfr.pdf
isc N-Channel MOSFET Transistor APT5020BVFRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5024bll.pdf
isc N-Channel MOSFET Transistor APT5024BLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5020bvr.pdf
isc N-Channel MOSFET Transistor APT5020BVRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
apt5024bvfr.pdf
isc N-Channel MOSFET Transistor APT5024BVFRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: APT5020BVFR , APT5020BVR , APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , APT5024BVFR , APT5024BVR , 20N50 , APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR .
