IPA045N10N3G MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA045N10N3G
Marking Code: 045N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 64 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 1100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO220FP
IPA045N10N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA045N10N3G Datasheet (PDF)
ipa045n10n3.pdf
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3FEATURESLow drain-source on-resistance:RDS(on) 4.5m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
ipa040n08nm5s.pdf
IPA040N08NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa040n06nm5s.pdf
IPA040N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa040n06n.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA040N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA040N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel
ipa041n04ng.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 40 VIPA041N04N GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 40 VIPA041N04N GTO-220-FP1 DescriptionFeatures Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel, normal l
ipa040n06n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA040N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
ipa041n04n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA041N04NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IPA65R280C6 | PB606BA | 2SK1502 | INJ0011AM1
History: IPA65R280C6 | PB606BA | 2SK1502 | INJ0011AM1
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