All MOSFET. IPA057N08N3G Datasheet

 

IPA057N08N3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPA057N08N3G
   Marking Code: 057N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 963 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220FP

 IPA057N08N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPA057N08N3G Datasheet (PDF)

 ..1. Size:592K  infineon
ipa057n08n3g.pdf

IPA057N08N3G
IPA057N08N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 80VOptiMOS3 Power-TransistorIPA057N08N3 GData SheetRev. 2.2FinalPower Management & MultimarketIPA057N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 5.7 mW Optimized technology for DC/DC

 3.1. Size:536K  infineon
ipa057n08n3.pdf

IPA057N08N3G
IPA057N08N3G

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 3.2. Size:256K  inchange semiconductor
ipa057n08n3.pdf

IPA057N08N3G
IPA057N08N3G

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3FEATURESLow drain-source on-resistance:RDS(on) 5.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 6.1. Size:546K  infineon
ipa057n06n3g ipa057n06n3 rev20.pdf

IPA057N08N3G
IPA057N08N3G

pe # ! ! #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35>5?B=1

 6.2. Size:201K  inchange semiconductor
ipa057n06n3.pdf

IPA057N08N3G
IPA057N08N3G

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA057N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PA102FMA | VBE2305

 

 
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