All MOSFET. APT5028BVR Datasheet

 

APT5028BVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT5028BVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm

Package: TO247

APT5028BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT5028BVR Datasheet (PDF)

1.1. apt5028bvr.pdf Size:62K _apt

APT5028BVR
APT5028BVR

APT5028BVR 500V 20A 0.280Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

3.1. apt5028svr.pdf Size:65K _apt

APT5028BVR
APT5028BVR

APT5028SVR 500V 20A 0.280Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

 4.1. apt5025an apt5030an.pdf Size:375K _update_mosfet

APT5028BVR
APT5028BVR



4.2. apt5024bllg.pdf Size:162K _update_mosfet

APT5028BVR
APT5028BVR

APT5024BLL APT5024SLL Ω 500V 22A 0.240Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

 4.3. apt5022bn.pdf Size:47K _update_mosfet

APT5028BVR
APT5028BVR

D TO-247 G APT5020BN 500V 28.0A 0.20Ω S APT5022BN 500V 27.0A 0.22Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 28 27 Amps IDM Pulsed Drain Current 1 112 108

4.4. apt5024svfrg.pdf Size:113K _update_mosfet

APT5028BVR
APT5028BVR

APT5024BVFR APT5024SVFR Ω 500V 22A 0.240Ω Ω Ω Ω BVFR FREDFET POWER MOS V® D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® SVFR also achieves faster switching speeds through optimized gate layout.

 4.5. apt5024bll apt5024sll.pdf Size:170K _update_mosfet

APT5028BVR
APT5028BVR

APT5024BLL APT5024SLL Ω 500V 22A 0.240Ω Ω Ω Ω R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses SLL along

4.6. apt5024sfll apt5024sfllg.pdf Size:216K _update_mosfet

APT5028BVR
APT5028BVR

 APT5024BFLL APT5024SFLL 500V 22A 0.240Ω BFLL R POWER MOS 7 FREDFET (B) Power MOS 7® is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7® by significantly lowering C G E RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along wi

4.7. apt5020bn.pdf Size:51K _apt

APT5028BVR
APT5028BVR

D TO-247 G APT5020BN 500V 28.0A 0.20Ω S APT5022BN 500V 27.0A 0.22Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 28 27 Amps IDM Pulsed Drain Current 1 112 108

4.8. apt5026hvr.pdf Size:59K _apt

APT5028BVR
APT5028BVR

APT5026HVR 500V 18.5A 0.260Ω POWER MOS V® TO-258 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lowe

4.9. apt5024avr.pdf Size:60K _apt

APT5028BVR
APT5028BVR

APT5024AVR 500V 18.5A 0.240Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

4.10. apt5025bn.pdf Size:51K _apt

APT5028BVR
APT5028BVR

D TO-247 G APT5025BN 500V 23.0A 0.25Ω S APT5030BN 500V 21.0A 0.30Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V

4.11. apt5020.pdf Size:62K _apt

APT5028BVR
APT5028BVR

APT5020SVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Le

4.12. apt5024bvr.pdf Size:59K _apt

APT5028BVR
APT5028BVR

APT5024BVR 500V 22A 0.240Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.13. apt5024bvfr.pdf Size:61K _apt

APT5028BVR
APT5028BVR

APT5024BVFR 500V 22A 0.240Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

4.14. apt5020svfr.pdf Size:64K _apt

APT5028BVR
APT5028BVR

APT5020SVFR 500V 26A 0.200Ω POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.15. apt5020svr.pdf Size:62K _apt

APT5028BVR
APT5028BVR

APT5020SVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Le

4.16. apt5024bfll.pdf Size:71K _apt

APT5028BVR
APT5028BVR

APT5024BFLL APT5024SFLL 500V 22A 0.240W TM BFLL FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fas

4.17. apt5024svr.pdf Size:32K _apt

APT5028BVR
APT5028BVR

APT5024SVR 500V 22A 0.240Ω POWER MOS V® Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower Leak

4.18. apt5020bvr.pdf Size:59K _apt

APT5028BVR
APT5028BVR

APT5020BVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

4.19. apt5022avr.pdf Size:58K _apt

APT5028BVR
APT5028BVR

APT5022AVR 500V 21A 0.220Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

4.20. apt5020blc.pdf Size:34K _apt

APT5028BVR
APT5028BVR

APT5020BLC APT5020SLC 500V 26A 0.200W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

4.21. apt5020bvfr.pdf Size:61K _apt

APT5028BVR
APT5028BVR

APT5020BVFR 500V 26A 0.200Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

4.22. apt5027.pdf Size:96K _apt

APT5028BVR
APT5028BVR

http://www.chipdocs.com http://www.chipdocs.com

Datasheet: APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , APT5024BVFR , APT5024BVR , APT5025BN , APT5026HVR , 2SK3568 , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN .

 

 
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