IPA60R380E6
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA60R380E6
Marking Code: 6R380E6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 10.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 46
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO220FP
IPA60R380E6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA60R380E6
Datasheet (PDF)
..1. Size:1282K infineon
ipa60r380e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an
..2. Size:943K infineon
ipp60r380e6 ipa60r380e6 ipd60r380e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C
..3. Size:223K inchange semiconductor
ipa60r380e6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
5.1. Size:2739K infineon
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor
5.3. Size:1368K infineon
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according
5.4. Size:2540K infineon
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli
5.5. Size:223K inchange semiconductor
ipa60r380p6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
5.6. Size:203K inchange semiconductor
ipa60r380c6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R380C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte
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