IPA60R600C6 Specs and Replacement
Type Designator: IPA60R600C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ -
Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220FP
- MOSFET ⓘ Cross-Reference Search
IPA60R600C6 datasheet
..1. Size:1224K infineon
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super... See More ⇒
..3. Size:225K inchange semiconductor
ipa60r600c6.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600C6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
4.1. Size:557K infineon
ipa60r600cp.pdf 
IPA60R600CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 U )DK GH ;>H / L . ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK HM U . I6A>;> 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ;;8... See More ⇒
4.2. Size:200K inchange semiconductor
ipa60r600cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
5.1. Size:1143K infineon
ipd60r600e6 ipp60r600e6 ipa60r600e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri... See More ⇒
5.2. Size:1084K infineon
ipa60r600p7s.pdf 
IPA60R600P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒
5.3. Size:1339K infineon
ipa60r600e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6 IPD60R600E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)... See More ⇒
5.4. Size:2849K infineon
ipb60r600p6 ipp60r600p6 ipa60r600p6 ipd60r600p6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPB60R600P6, IPP60R600P6, IPA60R600P6, IPD60R600P6 D PAK TO-220 TO-220 FP 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFET... See More ⇒
5.5. Size:2688K infineon
ipa60r600p6 ipd60r600p6 ipp60r600p6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R600P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R600P6, IPA60R600P6, IPD60R600P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒
5.6. Size:2519K infineon
ipb60r600p6 ipp60r600p6 ipd60r600p6 ipa60r600p6.pdf 
IPB60R600P6, IPP60R600P6, IPD60R600P6, IPA60R600P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒
5.7. Size:1014K infineon
ipa60r600p7.pdf 
IPA60R600P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MO... See More ⇒
5.8. Size:225K inchange semiconductor
ipa60r600e6.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600E6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
5.9. Size:225K inchange semiconductor
ipa60r600p6.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600P6 FEATURES With TO-220F Package Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
5.10. Size:201K inchange semiconductor
ipa60r600p7.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R600P7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: IPA60R299CP, IPA60R380C6, IPA60R380E6, IPA60R385CP, IPA60R450E6, IPA60R520C6, IPA60R520CP, IPA60R520E6, IRF640N, IPA60R600CP, IPA60R600E6, IPA60R750E6, IPA60R950C6, IPA65R280C6, IPA65R280E6, IPA65R380C6, IPA65R380E6
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