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APT5032CVR Specs and Replacement


   Type Designator: APT5032CVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO254
 

 APT5032CVR substitution

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APT5032CVR Specs

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APT5032CVR

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 8.2. Size:61K  apt
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APT5032CVR

APT5030AVR 500V 14.7A 0.300 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒

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APT5032CVR

D TO-247 G APT5025BN 500V 23.0A 0.25 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V... See More ⇒

Detailed specifications: APT5024AVR , APT5024BVFR , APT5024BVR , APT5025BN , APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , 2SK3568 , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , APT50M85JVR , APT6013JVR .

Keywords - APT5032CVR MOSFET specs

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